Power Mosfet model parameters


Drain to Source On-Resistance RDS(on) =mOhm (25oC)
Spice TransconductanceKP =S (25oC)
Gate threshold voltageVto =V
Drain InductanceLD =nH
Input CapacitanceCiss =pF
Output CapacitanceCoss =pF
Reverse Transfer CapacitanceCrss =pF
Calculate CGD and CGS
Gate-Source CapacitanceCGS =pF
Gate-Drain CapacitanceCGD =pF
Drain-Source CapacitanceCDS =pF
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.Model Model =
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Ohmic region (Normal operation) VDS=RDS(on)*IDS
IDS=(KP/2)VDS(2(VGS-VTO)-VDS)
Active region (Saturation) IDS=(KP/2)(VGS-VTO)2
CGD Junction Capacitance CGD(VGD)=CGD/SQRT((1-(VGD/0.5)))
RDS(on) Doubled every 100o temperature rise
KP Doubled every 100o temperature rise